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| CYStech Electronics Corp. Low VCE(sat) PNP Epitaxial Planar Transistor Spec. No. : C817N3-R Issued Date : 2003.04.03 Revised Date :2006.10.13 Page No. : 1/5 BTB1424N3 Features * Excellent DC current gain characteristics * Low Saturation Voltage VCE(sat)=-0.25V(typ)(IC=-2A, IB=-100mA). * Complementary to BTD2150N3 * Pb-free package Symbol BTB1424N3 Outline SOT-23 BBase CCollector EEmitter Absolute Maximum Ratings (Ta=25C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulsed)(Note 1) Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Note 1: Single pulse, Pw10ms, Duty Cycle30%. 2. Device mounted on a ceramic board ( 600mmx0.8mm) Symbol VCBO VCEO VEBO IC ICP Pd RJA Tj Tstg Limits -50 -50 -5 -3 -7 0.9 (Note 2) 138.9 150 -55~+150 Unit V V V A W C/W C C BTB1424N3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. -50 -50 -5 180 Typ. 240 35 Max. -1 -1 -0.5 560 Unit V V V A A V MHz pF Spec. No. : C817N3-R Issued Date : 2003.04.03 Revised Date :2006.10.13 Page No. : 2/5 Test Conditions IC=-50A IC=-1mA IE=-50A VCB=-40V VEB=-5V IC=-2A, IB=-100mA VCE=-2V, IC=-100mA VCE=-2V, IC=-500mA, f=100MHz VCB=-10V, IE=0A, f=1MHz *Pulse Test: Pulse Width 380s, Duty Cycle2% Classification Of hFE Rank Range R 180~390 S 270~560 Ordering Information Device BTB1424N3 Package SOT-23 (Pb-free) Shipping 3000 pcs / Tape & Reel Marking AE BTB1424N3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current gain vs Collector current 1000 VCE=5V Spec. No. : C817N3-R Issued Date : 2003.04.03 Revised Date :2006.10.13 Page No. : 3/5 C-E saturation voltage vs Collector current C-E saturation voltage---VCE(SAT)(mV) 10000 Current gain---HFE 1000 100 VCE=2V 100 IC=40IB VCE=1V 10 IC=10IB 1 1 10 100 1000 10000 Collector current---IC(mA) IC=20IB 10 1 10 100 1000 10000 Collector current---IC(mA) B-E saturation voltage vs Collector current 10000 B-E saturation---VBE(SAT)(mV) Power Dissipation---PD(mW) Power Derating Curve 250 200 150 100 50 0 IC=10IB 1000 100 1 10 100 1000 10000 Collector current---IC(mA) 0 50 100 150 200 Ambient Temperature --- Ta( ) BTB1424N3 CYStek Product Specification CYStech Electronics Corp. Reel Dimension Spec. No. : C817N3-R Issued Date : 2003.04.03 Revised Date :2006.10.13 Page No. : 4/5 Carrier Tape Dimension BTB1424N3 CYStek Product Specification CYStech Electronics Corp. SOT-23 Dimension Spec. No. : C817N3-R Issued Date : 2003.04.03 Revised Date :2006.10.13 Page No. : 5/5 A L Marking: 3 B 1 2 S TE AE V G 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style: Pin 1.Base 2.Emitter 3.Collector C D K H J *: Typical DIM A B C D G H Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: * Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTB1424N3 CYStek Product Specification |
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